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RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
October 2006
RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
Features
Single positive-supply operation and low power and
General Description
The RMPA1765 power amplifier module (PAM) is designed for Korean CDMA, CDMA2000-1X, WCDMA, and HSDPA personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.
shutdown modes 38% CDMA/WCDMA efficiency at +28 dBm average output power Compact lead-free compliant LCC package3.0 x 3.0 x 1.0mm with industry standard pinout Internally matched to 50 Ohms and DC blocked RF input/output. Meets CDMA2000-1XRTT/WCDMA performance requirements Meets HSDPA performance requirements
Device
Functional Block Diagram
(Top View)
PA MODULE
Vcc1 RF IN Vmode Vref
1 2 3 4
Input Match
MMIC
Output Match
8 7 6 5
Vcc2 RF OUT GND GND
DC Bias Control
(paddle ground on package bottom)
(c)2005 Fairchild Semiconductor Corporation
1
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RMPA1765 Rev. E
RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
Absolute Maximum Ratings(1)
Symbol
Vcc1, Vcc2 Vref Vmode Pin Tstg
Parameter
Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Value
5.0 2.6 to 3.5 3.5 +10 -55 to +150
Units
V V V dBm C
Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics(1)
Symbol
f SSg Gp Po PAEd
Parameter
Operating Frequency Small-Signal Gain Power Gain Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm
Min. Typ. Max. Units
1720 26 28 26 28 16 38 9 25 490 130 -50 -52 -60 -68 1780 MHz dB dB dB dBm dBm % % % mA mA dBc dBc dBc dBc Po = 0dBm
Comments
CDMA OPERATION Po = +28dBm; Vmode = 0V Po = +16dBm; Vmode = 2.0V Vmode = 0V Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode 2.0V, Vcc = 1.4V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode = 2.0V Po = +28dBm; Vmode = 0V Po = +16dBm; Vmode = 2V Po = +28dBm; Vmode = 0V, IS-95 Po = +16dBm; Vmode = 2V
Itot
High Power Total Current Low Power Total Current Adjacent Channel Power Ratio
ACPR1 ACPR2
1.25MHz Offset 2.25MHz Offset
GENERAL CHARACTERISTICS VSWR NF Rx No 2fo-5fo S Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression Spurious Outputs
(2)(3)
2.0:1 4 -139 -30 -60 10:1 -30 45 5 1 8 5 85 C mA mA A Vmode 2.0V Po < +28dBm No applied RF signal. dB dBm/ Hz dBc dBc Po +28dBm; 1840MHz to 1870MHz Po +28dBm Load VSWR 5.0:1 No permanent damage.
Ruggedness w/ Load Mismatch(3) Tc Iccq Iref Icc(off) Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current DC CHARACTERISTICS
Notes: 1. All parameters met at Tc = +25C, Vcc = +3.4V, Vref = 2.85V, f = 1750 MHz and load VSWR 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design.
2 RMPA1765 Rev. E
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RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
Performance Data
RMPA1765 K-PCS 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
33.0 32.0 31.0 30.0
RMPA1765 K-PCS 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
43.0 42.0 41.0 40.0
Gain (dB)
29.0 28.0 27.0 26.0 25.0 24.0 23.0 1720 1740 1760 1780
PAE (%)
39.0 38.0 37.0 36.0 35.0 34.0 33.0 1720 1740 1760 1780
Frequency (MHz)
Frequency (MHz)
RMPA1765 K-PCS 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
-40.0 -42.0 -44.0 -46.0 -48.0 -50.0 -52.0 -54.0 -56.0 -58.0 -60.0 1720 1740 1760 1780 -50.0 -52.0 -54.0 -56.0 -58.0 -60.0 -62.0 -64.0 -66.0 -68.0 -70.0
RMPA1765 K-PCS 3x3mm2 PAM Vcc=3.4V, Vref = 2.85V, Vmode=0V, Pout=28dBm
ACPR1 (dBc)
ACPR2 (dBc)
1720
1740
1760
1780
Frequency (MHz)
Frequency (MHz)
3 RMPA1765 Rev. E
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RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACPR1 of -52dBc and ACPR2 of less than -61dBc. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power.
Recommended Operating Conditions
Symbol
f Vcc1, Vcc2 Vref Vmode Pout Tc
Parameter
Operating Frequency Supply Voltage Reference Voltage (operating) (shutdown) Bias Control Voltage (low-power) (high-power) Linear Output Power (high-power) (low-power) Case Operating Temperature
Min.
1720 3.0 2.7 0 1.8 0
Typ.
3.4 2.85 2.0
Max.
1780 4.2 3.1 0.5 3.0 0.5 +28 +16
Units
MHz V V V V V dBm dBm C
-30
+85
DC Turn-On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2V (Pout < 16dBm)
4 RMPA1765 Rev. E
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RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
Evaluation Board Layout
1 5 6 3 6 5
2
Z XYTT 1765
4
7 5
Materials List
Qty
1 2 7 Ref 3 3 2 1 1 A/R A/R
Item No.
1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9
Part Number
G657691-1 V1 #142-0701-841 #2340-5211TN GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K SN63 SN96 PC Board
Description
SMA Connector Terminals Assembly, RMPA1765 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) Solder Paste Solder Paste
Vendor
Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Indium Corp. Indium Corp.
Evaluation Board Schematic
3.3 F Vcc1 SMA1 RF IN Vmode 1000 pF Vref
1000 pF 1 2
1000 pF 8
3.3 F Vcc2 50 Ohm TRL SMA2 RF OUT
50 Ohm TRL
3
Z XYTT 1765
9
7
4 0.1 F
5, 6
(package base)
5 RMPA1765 Rev. E
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RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
Package Outline
TOP VIEW 1 8
2 3.00 +.100 mm SQ. -.050 3
4
Z XYTT 1765
FRONT VIEW
7
6
5
X Z 17 YTT 65
I/O 1 INDICATOR
1.10mm MAX.
4X R.25mm 4 BACK SIDE SOLDER MASK 3 6 2.60mm 2 9 7 8 0.20mm DETAIL A TYP. 0.40mm 0.10mm 1 0.40mm 0.10mm 5 2 0.40mm
SEE DETAIL A 1.00mm
1
1.00mm BOTTOM VIEW
Signal Descriptions
Pin #
1 2 3 4 5 6 7 8
Signal Name
Vcc1 RF In Vmode Vref GND GND RF Out Vcc2 RF Input Signal
Description
Supply Voltage to Input Stage Reference Voltage High-Power/Low-Power Mode Control Reference Voltage Ground Ground RF Output Signal Supply Voltage to Output Stage
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RMPA1765 K-PCS, CDMA, CDMA2000-1X and WCDMA Power EdgeTM Power Amplifier Module
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within 7 days of removal from the dry pack. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
260
Ramp-Up R ate 3 C/sec max
Peak tem p 260 +0/-5 C 10 - 20 sec
Temperature (C)
217 200
Time above li quidus temp 60 - 150 sec
150
Preheat, 150 to 200 C 60 - 180 sec
100
Ramp-Up R ate 3 C/sec max
50 25
Time 25 C/sec t o peak tem p 6 mi nutes max
Ramp-Do wn Rate 6 C/sec max
Time (Sec)
7 RMPA1765 Rev. E
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FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I21

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